Nexperia’s TrEOS ESD protection technology uses active silicon-controlled rectification to deliver a winning combination of extremely low capacitance (down to 0.1 pF); extremely low clamping (dynamic resistance down to 0.1 Ω) and very high robustness against surge and ESD pulses (up to 20A 8/20 µs for very fast datalines). Turn-on time is also very fast at about 0.5 ns and devices can withstand up to 30 kV contact discharge, exceeding IEC 61000-4-2, level 4. TrEOS devices for applications where the protection is placed before the capacitor are now available with industry’s leading peak pulse current ratings of 9.5, 15 and 20 A for 8/20 IEC61000-4-5 conditions. TrEOS devices for use after the capacitor similarly deliver industry-leading performance, featuring the lowest trigger voltages (V_t1), down to 4.3 V. These features are also relevant for USB Type-A and MicroUSB interfaces.

Comments Stefan Seider, product manager at Nexperia: “The options offered by USB Type-C and USB Power Delivery are very attractive: To ensure that end customers can enjoy data speeds of up to 20 Gbps and up to 100 W charging, Nexperia offers two TrEOS protection families that support every protection strategy around the new USB3.2 Rx capacitor for protecting sensitive transceivers against possible fault conditions.”

TrEOS protection diodes are packaged in the widely-used 0603 form factor. Advantages of the very compact, very robust DSN0603-2 (SOD962-2) package include the lack of bond wires, which eliminates another failure mode and results in the lowest inductance for fastest protection. This package is very popular for mobile and computing applications. Further space-saving packages are also available. Nexperia has provided a comprehensive parametric USB protection search guide (click here) to help designers choose the optimal device for their system configuration.

For more information on Nexperia’s TrEOS ESD protection click here.