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en- MMRF5017HS RF Power GaN Transistor
NXP’s MMRF5017HS high gain and high ruggedness make this device ideally suited for continuous wave, pulse, and broadband RF applications

NXP's MMRF5017HS 125 W RF power GaN transistor is capable of broadband operation from 30 MHz to 2200 MHz and is ideally suited for CW, pulse, and broadband RF applications. Performance is guaranteed for applications operating in the 30 MHz to 2200 MHz band.

Features    
  • Advanced GaN on SiC, offering high power density
  • Decade bandwidth performance
  • Input matched for extended wideband performance
  • High ruggedness: > 10:1 VSWR
  • RoHS compliant
Applications  
  • Public mobile radios, including emergency service radios
  • Industrial, scientific, and medical
  • Wideband laboratory amplifiers
  • Wireless cellular infrastructure

MMRF5017HS RF Power GaN Transistor
Image Manufacturer Part Number Description   View Details
MMRF5017HSR5 datasheet link GAN 2.2GHZ 250W NI400S4S MMRF5017HSR5 GAN 2.2GHZ 250W NI400S4S   MMRF5017HSR5 product page link

2018081204 / Componenti elettronici / Digi-Key Electronics / martedì 21. agosto 2018 ---
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